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NCV8403 Self-Protected Low Side Driver with Temperature and Current Limit
42 V, 14 A, Single N-Channel, SOT-223
NCV8403 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.
Features
VDSS (Clamped) 42 V
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ID MAX (Limited) 15 A Drain Overvoltage Protection
RDS(on) TYP 53 mW @ 10 V
* * * * * * * * * * *
Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) RoHs Compliant AEC-Q101 Qualified NCV Prefix for Automotive and Other Applications Requiring Site and Change Control These are Pb-Free Devices
Gate Input
ESD Protection Temperature Limit Current Limit Current Sense
Source
Typical Applications
4 1 2 3
MARKING DIAGRAM
DRAIN 4 AYW 8403G G 1 2 3 SOURCE GATE DRAIN YWW V8403G
* Switch a Variety of Resistive, Inductive and Capacitive Loads * Can Replace Electromechanical Relays and Discrete Circuits * Automotive / Industrial
SOT-223 CASE 318E STYLE 3 4 12
3
DPAK CASE 369C
A = Assembly Location Y = Year IL = Wafer Lot W, WW = Work Week G or G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2010
February, 2010 - Rev. 4
1
Publication Order Number: NCV8403/D
NCV8403
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage Drain Current Continuous Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) Thermal Resistance - SOT-223 Version Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Thermal Resistance - DPAK Version Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Inductive Load Switching Energy (VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W) Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) Operating Junction Temperature Storage Temperature Symbol VDSS VGS ID PD Value 42 "14 Unit Vdc Vdc W
Internally Limited 1.13 1.56 12 110 80 2.5 95 50 470 55 -40 to 150 -55 to 150 mJ V C C
RqJC RqJA RqJA RqJC RqJA RqJA EAS VLD TJ Tstg
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu. + ID
DRAIN IG + GATE VDS
VGS
SOURCE
-
-
Figure 1. Voltage and Current Convention
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NCV8403
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = -40C to 150C) (Note 3) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) (Note 3) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) SWITCHING CHARACTERISTICS (Note 3) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Slew-Rate ON (20% VDS to 50% VDS) Slew-Rate OFF (80% VDS to 50% VDS) Current Limit Current Limit Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis GATE INPUT CHARACTERISTICS (Note 3) Device ON Gate Input Current Current Limit Gate Input Current Thermal Limit Fault Gate Input Current VGS = 5 V ID = 1.0 A VGS = 10 V ID = 1.0 A VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 3) Electro-Static Discharge Capability Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD ESD 4000 400 - - - - V V IGTL IGCL IGON 50 400 0.1 0.6 0.45 1.5 mA mA mA VIN = 0 V to 5 V, VDD = 25 V ID = 1.0 A, Ext RG = 2.5 W VIN = 0 V to 10 V, VDD = 25 V, ID = 1.0 A, Ext RG = 2.5 W Vin = 0 to 10 V, VDD = 12 V, RL = 4.7 W tON tOFF tON tOFF -dVDS/dtON dVDS/dtOFF ILIM ILIM TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) 10 5.0 12 8.0 150 - 150 - 44 84 15 116 2.43 0.83 15 10 17 13 175 15 165 15 20 15 22 18 200 - 185 - Adc Adc C C C C V/ms ms VGS(th) 1.0 - - - - - - 1.7 5.0 53 95 63 105 0.95 2.2 - 68 123 76 135 1.1 Vdc mV/C mW V(BR)DSS 42 40 - - - 46 45 0.6 2.5 50 51 51 5.0 - 125 Vdc Vdc mAdc Symbol Min Typ Max Unit
IDSS
IGSS
mAdc
RDS(on)
RDS(on)
mW
VSD
V
SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) VGS = 5.0 V, VDS = 10 V VGS = 5.0 V, TJ = 150C (Note 3) VGS = 10 V, VDS = 10 V VGS = 10 V, TJ = 150C (Note 3) VGS = 5.0 Vdc (Note 3) VGS = 5.0 Vdc VGS = 10 Vdc (Note 3) VGS = 10 Vdc
3. Not subject to production testing. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part.
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NCV8403
TYPICAL PERFORMANCE CURVES
10 1000
TJstart = 150C
Emax (mJ)
ILmax (A)
TJstart = 25C
TJstart = 25C
TJstart = 150C
1
10 L (mH)
100
100
10 L (mH)
100
Figure 2. Single Pulse Maximum Switch-off Current vs. Load Inductance
100 1000
Figure 3. Single-Pulse Maximum Switching Energy vs. Load Inductance
10 TJstart = 25C
Emax (mJ)
ILmax (A)
TJstart = 25C
TJstart = 150C
TJstart = 150C 1 1 TIME IN CLAMP (ms) 10 100 1 TIME IN CLAMP (ms) 10
Figure 4. Single Pulse Maximum Inductive Switch-off Current vs. Time in Clamp
25 20 15 10 5 0 Ta = 25C 3V 5 VGS = 2.5 V 0 1 2 VDS (V) 3 4 5 0 1.0 6V 7V 8V 9V 10 V 15 5V 4V 20
Figure 5. Single-Pulse Maximum Inductive Switching Energy vs. Time in Clamp
VDS = 10 V
-40C 25C
ID (A)
ID (A)
10
100C 150C
1.5
2.0
2.5 VGS (V)
3.0
3.5
4.0
Figure 6. On-state Output Characteristics
Figure 7. Transfer Characteristics
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NCV8403
TYPICAL PERFORMANCE CURVES
150 125 RDS(on) (mW) 100 100C 75 25C 50 -40C 25 3 4 5 6 7 8 9 10 150C ID = 3 A 100 90 80 RDS(on) (mW) 70 60 50 40 30 20 1 2 3 4 5 ID (A) 6 25C, VGS = 5 V 25C, VGS = 10 V -40C, VGS = 5 V -40C, VGS = 10 V 7 9 8 10 150C, VGS = 5 V 150C, VGS = 10 V 100C, VGS = 5 V 100C, VGS = 10 V
VGS (V)
Figure 8. RDS(on) vs. Gate-Source Voltage
Figure 9. RDS(on) vs. Drain Current
2.00 ID = 5 A 1.75 NORMALIZED RDS(on)
25
-40C
20 1.50 1.25 1.00 0.75 0.50 -40 -20 VGS = 10 V 10 ILIM (A) 15
25C
VGS = 5 V
100C 150C
VDS = 10 V 0 20 40 60 T (C) 80 100 120 140 5 5 6 7 VGS (V) 8 9 10
Figure 10. Normalized RDS(on) vs. Temperature
25 VGS = 10 V 20 IDSS (mA) ILIM (A) VGS = 5 V 15 VDS = 10 V
Figure 11. Current Limit vs. Gate-Source Voltage
100 10 1 0.1 0.01 150C
VGS = 0 V
100C 25C -40C
10
0.001 0.0001
5 -40 -20
0
20
40
60
80
100
120
140
0.00001
10
15
20
25 VDS (V)
30
35
40
TJ (C)
Figure 12. Current Limit vs. Junction Temperature
Figure 13. Drain-to-Source Leakage Current
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NCV8403
TYPICAL PERFORMANCE CURVES
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -40 -20 0.6 0.5 VSD (V) ID = 1.2 mA VDS = VGS 1.0 0.9 0.8 0.7 -40C 25C
NORMALIZED VGS(th) (V)
100C 150C VGS = 0 V
0
20
40
60 T (C)
80
100
120 140
1
2
3
4
5 IS (A)
6
7
8
9
10
Figure 14. Normalized Threshold Voltage vs. Temperature
250 200 150 100 50 0 td(on) 3 4 5 6 7 8 9 VGS (V) VDD = 25 V ID = 5 A RG = 0 W DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 3.0 2.5 2.0 1.5 1.0 0.5 0
Figure 15. Source-Drain Diode Forward Characteristics
VDD = 25 V ID = 5 A RG = 0 W
-dVDS/dt(on)
TIME (ms)
td(off) tf tr 10
dVDS/dt(off)
3
4
5
6
7
8
9
10
VGS (V)
Figure 16. Resistive Load Switching Time vs. Gate-Source Voltage
DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 100 td(off), VGS = 10 V 75 TIME (ms) VDD = 25 V ID = 5 A 50 tf, VGS = 5 V td(on), VGS = 5 V td(on), VGS = 10 V td(off), VGS = 5 V tf, VGS = 10 V tr, VGS = 5 V tr, VGS = 10 V 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0
Figure 17. Resistive Load Switching Drain-Source Voltage Slope vs. Gate-Source Voltage
-dVDS/dt(on), VGS = 10 V
VDD = 25 V ID = 5 A
25
dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V -dVDS/dt(on), VGS = 5 V 500 1000 RG (W) 1500 2000
0
0
500
1000 RG (W)
1500
2000
Figure 18. Resistive Load Switching Time vs. Gate Resistance
Figure 19. Drain-Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance
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NCV8403
TYPICAL PERFORMANCE CURVES
150 125 RqJA (C/W) 100 PCB Cu thickness, 1.0 oz 75 PCB Cu thickness, 2.0 oz 50 25 50 PCB Cu thickness, 2.0 oz 0 100 200 300 400 500 600 700 800 25 0 100 200 300 400 500 600 700 800 RqJA (C/W) 150 125 100 75 PCB Cu thickness, 1.0 oz
COPPER HEAT SPREADER AREA (mm2)
COPPER HEAT SPREADER AREA (mm2)
Figure 20. RqJA vs. Copper Area - SOT-223
Figure 21. RqJA vs. Copper Area - DPAK
1000 100 10 1 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
50% Duty Cycle 20% 10% 5% 2% 1%
R(t) C/W
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance - SOT-223 Version
100 50% Duty Cycle 10 R(t) C/W 20% 10% 5% 1 2% 1%
0.1 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.01
PULSE TIME (sec)
Figure 23. Transient Thermal Resistance - DPAK Version
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NCV8403
TEST CIRCUITS AND WAVEFORMS
RL
VIN RG D G DUT S + VDD -
IDS
Figure 24. Resistive Load Switching Test Circuit
90%
VIN
10% td(ON) tr td(OFF) tf 90%
IDS
10%
Figure 25. Resistive Load Switching Waveforms
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NCV8403
TEST CIRCUITS AND WAVEFORMS
L
VDS VIN RG D G DUT S VDD + -
tp
IDS
Figure 26. Inductive Load Switching Test Circuit
5V
VIN Tav Tp V(BR)DSS Ipk
0V
VDS
VDD
VDS(on) IDS 0
Figure 27. Inductive Load Switching Waveforms
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NCV8403
ORDERING INFORMATION
Device NCV8403STT1G NCV8403STT3G NCV8403DTRKG Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) DPAK (Pb-Free) Shipping 1000 / Tape & Reel 4000 / Tape & Reel 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NCV8403
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE M
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 -
4
HE
E
1 2 3
e1
b e A q L1 C
DIM A A1 b b1 c D E e e1 L1 HE
q
MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0
MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0
MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10
0.08 (0003)
A1
STYLE 3: PIN 1. 2. 3. 4.
GATE DRAIN SOURCE DRAIN
SOLDERING FOOTPRINT*
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079
mm 1.5 SCALE 6:1 inches 0.059 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NCV8403
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE) CASE 369C-01 ISSUE B
-T- B V R
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
C E
S
A
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
RECOMMENDED FOOTPRINT*
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC)
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NCV8403/D

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